Experimental Investigation of DC-RF Dispersion in AlGaN/GaN HFET’s Using Pulsed I-V and Time-Domain Waveform Measurements
نویسندگان
چکیده
AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon of DC-RF dispersion. DC pulsed I-V measurements were performed where the pulse “off” state was set to different bias points, to simulate a class A bias condition at various drain voltages. RF timedomain waveform measurements were also performed. The I-V measurements exhibited the common problem of current slump, as did the RF power performance of the device. Interestingly, it was found that there was strong correlation between the pulsed I-V and RF measurements when they are considered as a function of bias point. Although current slump is evident during pulsed I-V measurements, it is not permanent, and there is negligible degradation of the device after prolonged RF stimulus.
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